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CHA3063
RoHS COMPLIANT
5.5-23GHz Driver Amplifier
GaAs Monolithic Microwave IC Description
The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process. The circuit is manufactured with a pHemt process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
Main Feature
24 20 Gain Rlosses & NF ( dB )
dBS21
Broadband performance 5.5-23GHz 21dBm output power (Psat) 19dB gain, 1dB gain flatness Typical PAE:11%@P-1dB Chip size : 1.33 x 0.910x 0.1mm
16 12 8
NF
4 0 -4 -8
dBS11 dBS22
-12 -16 -20 -24 2 4 6 8 10 12 14
16
18
20
22
24
Frequency ( GHz )
Typical On wafer measurements
Main Characteristics
Tamb = +25 C Symbol Fop G Pout Parameter Operating frequency range Small signal gain Output power, Pin=0dBm Min 5.5 18 +18 19 +20 160 210 Typ Max 23 Unit GHz dB dBm mA
Id_small_signal Bias current
ESD Protection : Electrostatic discharge sensitive device observe handling precautions !
Ref : DSCHA3063-8144 - 23 May 08 1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3063
Electrical Characteristics on wafer
5.5-23GHz Driver Amplifier
Tamb = +25 Vd1=Vd2=4V Vg tuned for Id=160mA (around -0.27V) C, Symbol
Fop G
Parameter
Operating frequency range Small signal gain (5.5-6GHz) Small signal gain (6-23GHz)
Min
5.5 17 18
Typ
Max
23
Unit
GHz dB
19 1.0 35
dB dB dB dBm dBm dBm -7 -7 6 210 dB dB dB mA
G Is P1dB Pout OIP3 RL_IN RL_OUT NF
Small signal gain flatness Reverse isolation CW output power at 1dB compression (1) Output Power (Pin=0dBm) Output 3rd order intercept point (2) Input Return Loss (3) Output Return Loss (3) Noise figure +16 +18
+18 +20 28 -15 -15 4.5 160
Id_small signal Bias current
(1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement (3) RL_IN, RL_OUT < 6dB from 5.5GHz to 7GHz
Absolute Maximum Ratings (1)
Tamb. = 25 C Symbol
Vds Ids Vg Ig Vgd Pin Ta Tstg
Parameter
Drain bias voltage_small signal Drain bias current_small signal Gate bias voltage Gate bias current Maximum negative gate drain Voltage (Vg-Vd) Maximum continuous input power Maximum peak input power overdrive (2) Operating temperature range Storage temperature range
Values
5.0 210 -2 to +0.4 0.7 -5 +1 +15 -40 to +85 -55 to +125
Unit
V mA V mA V dBm dBm C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref : DSCHA3063-8144 - 23 May 08 2/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5.5-23GHz Driver Amplifier
Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25 C.
CHA3063
Typical Scattering Parameters ( On wafer Sij measurements)
FREQ GHz 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 11,0 12,0 13,0 14,0 15,0 16,0 17,0 18,0 19,0 20,0 21,0 22,0 23,0 24,0 25,0 26,0 27,0 28,0 29,0 30,0
S11 dB -0,3 -0,7 -3,4 -5,7 -7,9 -9,0 -11,3 -13,5 -14,3 -14,0 -13,2 -13,2 -15,3 -16,7 -21,2 -18,6 -19,8 -18,8 -20,8 -19,8 -15,4 -14,2 -11,5 -11,6 -3,9 -2,0 -1,3 -1,3 -1,3 -1,2
S11 / -35,6 -75,6 -113,7 -140,7 -170,3 162,5 121,8 82,5 39,7 0,9 -34,0 -62,6 -95,8 -125,2 -125,5 -140,0 -124,7 -172,0 101,6 23,1 -14,7 -34,2 -43,5 -30,9 -46,7 -74,8 -99,2 -115,8 -128,4 -140,1
S12 dB -60,9 -63,1 -54,5 -53,1 -43,5 -44,2 -41,0 -38,7 -37,6 -37,1 -36,7 -35,6 -36,0 -35,0 -34,7 -36,4 -36,4 -38,5 -37,4 -35,2 -34,0 -33,8 -35,3 -33,1 -34,9 -35,3 -39,7 -33,9 -32,3 -28,7
S12 / 84,0 142,8 -53,2 138,2 67,4 34,7 13,6 -16,7 -39,6 -61,4 -82,9 -107,7 -126,6 -148,4 -175,9 170,4 137,3 135,9 154,6 125,8 101,5 71,7 46,5 -0,4 -86,0 -172,0 157,6 138,6 128,4 96,4
S21 dB -12,7 -13,7 11,6 15,2 16,4 18,8 19,3 18,9 19,1 19,3 19,5 19,6 19,5 19,2 18,5 18,2 18,1 18,1 18,0 18,0 18,2 18,9 19,5 20,4 17,6 10,9 3,9 -3,5 -12,1 -21,0
S21 / 86,9 -179,2 123,1 58,5 19,0 -12,3 -46,9 -75,2 -100,4 -125,2 -150,7 -175,1 159,3 133,1 111,1 89,1 70,4 44,3 22,0 -2,5 -26,4 -57,7 -89,3 -144,0 153,9 104,5 69,9 44,6 29,3 47,7
S22 dB -0,6 -1,4 -4,7 -6,2 -7,4 -11,1 -12,0 -11,6 -12,9 -14,4 -13,7 -13,5 -11,9 -11,9 -13,1 -14,7 -19,5 -17,4 -18,5 -19,4 -23,3 -21,4 -16,9 -6,3 -3,1 -3,2 -4,3 -4,7 -5,0 -5,9
S22 / -35,0 -67,7 -93,2 -111,6 -133,3 -149,1 -155,1 -173,2 171,7 165,8 164,9 148,9 131,3 116,0 95,0 79,9 72,4 72,2 57,4 47,4 32,5 76,8 77,6 46,6 -13,3 -59,0 -90,9 -113,7 -133,9 -153,6
Ref : DSCHA3063-8144 - 23 May 08
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3063
5.5-23GHz Driver Amplifier
Typical ON JIG Measurements (deembedded)
Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25 C
GAIN & ReturnLosses MEASUREMENTS IN TEST JIG
25
S21
19 13
Gain/ReturnLosses (dB)
7 1 -5
S22
-11 -17
S11
-23 -29 -35 1 3 5 7 9 11 13 15 17 19 21 23 25 27
Frequency (GHz)
POWER MEASUREMENTS IN TEST JIG (deembedded)
30 25
25 Output Power (dBm) / PAE (%)
Psat (Glin-3dB)
Linear Gain
20
20
P-1dB
15
15
PAE @ 1 db compression
10
10
5
5
0
0 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24
-5
Ref : DSCHA3063-8144 - 23 May 08
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Gain (dB)
5.5-23GHz Driver Amplifier
Typical ON JIG Power Measurements (deembedded)
Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25 C
Frequency : 6 GHz
25
CHA3063
500 450
Pout (dBm) / Gain (dB) / PAE (%)
20
Gain
400 350 300 250
15
10
Pout
200
Id
150 100
PAE
5
50 0 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Input Power (dBm) 0
Frequency : 20GHz
25 500 450 Pout (dBm) / Gain (dB) / PAE (%) 20 400 350
Gain
15
300 250 Id (mA)
10
Pout
200 150
Id
5
100 50
PAE
0 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Input Power (dBm)
Ref : DSCHA3063-8144 - 23 May 08 5/8
0
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Id (mA)
CHA3063
5.5-23GHz Driver Amplifier
Vd=4V Id=160mA @ 23GHz f=10MHz
35 30 25 20 15 Output power (dBm) 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Input power (dBm)
H3 H1
OIP3 # 28.5dBm
75 65
Fundamental 3rd order IM3
55 45 35 25 15 5 4 6 8 10 12 14 IM3 (dBm) 85 C 25 C -40 C
F2 + ( F2-F1 ) Df=10MHz F2 Df=10MHz IM3
Typical ON JIG Noise Figure Measurements
Noise Figure versus Temperature
6,5 6 5,5 5 4,5 4 3,5 3 2,5 2 5 7 9 11 13 15 17 19 21 23 Frequency (GHz)
Ref : DSCHA3063-8144 - 23 May 08 6/8 Specifications subject to change without notice
Noise Figure (dB)
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5.5-23GHz Driver Amplifier
Chip Assembly and Mechanical Data
To Vd1,2 drain supply feed
CHA3063
To Vg gate supply feed
Note :Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended
Chip Mechanical Data and Pin references.
( Chip thickness : 100m. All dimensions are in micrometers)
Ref : DSCHA3063-8144 - 23 May 08
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3063
5.5-23GHz Driver Amplifier
Ordering Information
Chip form : CHA3063-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref : DSCHA3063-8144 - 23 May 08
8/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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